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  • Impedans Octiv used in a study demonstrating a simple radio-frequency (RF) power Impedans Octiv used in a study demonstrating a simple radio-frequency (RF) power-coupling scheme for a micro atmospheric pressure plasma jet 查看详情 >
  • Impedans Octiv used in a study demonstrating a simple radio-frequency (RF) power In this paper, the authors demonstrate a simple radio frequency (RF) power-coupling scheme for a micro atmospheric pressure plasma jet (μAPPJ) based on a series LC resonance, with the discharge gap being part of the resonant element. The Impedans Octiv was used in the experiment. 查看详情 >
  • Octiv Mono used in RF Match Network Characterization It is reported that a RF match network can have up to 50% power loss in a plasma process or any process with a RF power delivery system to a non-50ohm load causing variability within the process. In this document we discuss a novel method to characterize a matching network using two Octiv Monos 查看详情 >
  • Ion angular distribution measurement with a planar retarding field analyser AbstractIn this application note, we present a novel method which can be applied to a planar retarding field energy analyser (RFEA) for the measurement of ion a 查看详情 >
  • Ion energy and ion flux measurements through high-aspect ratio holes using the Vertex system AbstractHigh aspect ratio (AR) etching is a key process in integrated circuit (IC) fabrication. The manufacture of a 3D NAND memory stack requires structures wi 查看详情 >
  • Ion velocity distribution measurement through high-aspect ratio holes using the Semion system Plasma etching and filling of high aspect-ratio (AR) structures is becoming more difficult at each new semiconductor technology node for several reasons. Ion bombardment of the sidewalls of the feature (due to the angular distribution of ion energies) complicates etching profile control. Also, ion loss on the sidewall reduces ion flux to the bottom of the feature. Ions are directed to the substrate with an angular spread due to the ion thermal velocity at the sheath edge. The thermal velocity causes ions to have a velocity component parallel to the substrate surface while the sheath electric field accelerates the ion toward the substrate in the perpendicular direction. As a result, the ion arrives at the surface at off-normal incidence. 查看详情 >
  • Measurement of deposition rates and ion energy distributions using the Quantum System Thin films of various materials are deposited on semiconductor wafers for a variety of applications in integrated circuit manufacturing. The rate of deposition is controlled by neutral and ionic species arriving at the substrate surface. In sputtering processes, the ionization fraction, defined as ratio of ion to total (total = ion + neutral) deposition rates, is mainly determined by the applied cathode power, chamber pressure and the target material (since the ionization potential is material dependent). Thin film quality and deposition rates are strongly dependent on the fraction of ionization and therefore measurement of ionized flux fraction at the substrate is becoming crucial for process development and control. A compact retarding field energy analyzer with embedded quartz crystal microbalance (QCM), known as the Quantum system1, has been developed to measure deposition rate, ionization fraction and ion energy distribution arriving at a substrate location. 查看详情 >
  • Observation of two-temperature electrons in a sputtering magnetron plasma Understanding electron transport in sputtering magnetrons is essential for the understanding of the operation of these devices, which are used for sputter etching and thin-film deposition. Several recent experiments have used Langmuir probes to investigate the electron component of a magnetron plasma and mechanisms of electron transport. For instance, Rossnagel and Kaufman reported that the electron temperature and density decrease with distance from the cathode, and noted the presence of a high-temperature electron tail under certain conditions, such as in a He discharge. 查看详情 >
  • Hall Effect Thruster plasma plume characterization with probe measurements self-similar fluid models Hall effect thrusters (HET) are currently recognized as a good propulsion means for long missions and moves that require large velocity increments. The plasma plume of a HET exhibits a relatively large divergence angle of about 45°, and investigating this plume and its expansion into space is vital for understanding these devices and assessing the mechanical and electrical interactions of the exhaust plasma plume with the spacecraft itself and the surrounding environment. 查看详情 >
  • End-point detection of polymer etching using Langmuir Probes Determining accurately the end point of a plasma-etching process is extremely important for integrated circuit fabrication, as overetching can result in the removal of part of the film, or substrate lying under the film to be etched, and/or in extra undercut of the film. End-point detection is traditionally performed using several different techniques including the four most common techniques: measurement of the DC self-bias voltage, mass spectrometry, emission spectrometry, and interferometry. 查看详情 >
  • Langmuir Probe used in an RF Dusty Plasma to measure the dust charge and density It is reported that 50 per cent of the failure in semiconductor production is due to dust particle contamination in plasma processes such as plasma etching. This study aimed to develop a method for measuring the density and charges of dust particles in a capacitive coupled cylinder discharge chamber in mixtures of gases SiH4 / C2H4 / Ar. A Langmuir probe was employed to gain such parameters as electron density and ion density of the dusty plasma. 查看详情 >
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